• 专利附录
  • 专利说明
  • 权利要求
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  • 优先权
    • 专利摘要:
    A method of forming a superconducting device 232 using a selective etching technique on superconducting thin films is disclosed. This method utilizes rapid etching combining ion implantation with chemical etching. Portions of the superconducting film to be retained are masked from the ion implantation process 217 (215). The chemical etching process removes the ion implanted portions 225, 227 of the superconducting film at a much faster rate than the non-ion implanted portions 223, leaving only the non-ion implanted portions 223. The superconducting device thus produced can be used as nanostructures and nano tips, bolometers, multilayer RF coils, microwave waveguides and filters.
    公开号:KR20000070722A
    申请号:KR1019997006972
    申请日:1998-01-21
    公开日:2000-11-25
    发明作者:키유안 마；밍글링 첸
    申请人:더 트러스티스 오브 컬럼비아 유니버시티 인 더 시티 오브 뉴욕；
    IPC主号:
    专利说明:

    FORMATION OF SUPERCONDUCTING DEVICES USING A SELECTIVE ETCHING TECHNIQUE}
    Recent developments in high temperature superconducting (HTS) electronics have demonstrated that HTS materials can provide faster, lower noise and more precise electronic components for the 21st century. HTS devices can switch at higher speeds than silicon transistors, require much less power, and have thousands or hundreds of thousands of times less microwave loss than metals at satellite operating frequencies (10-60 GHz), even with the highest sensitivity. Will be able to detect human EEG signals. HTS devices currently under development include Josephson junctions, superconducting quantum interference devices (SQUIDs), radio frequency (RF) coils, bolometers, and microwave components. Josephson junctions are the building blocks of superconducting digital circuits for high speed computer and communication systems. SQUID has a variety of applications, including magnetic, noninvasive diagnosis of the human heart and brain, nondestructive evaluation of various structural materials, and geophysical exploration. RF coils programmed with HTS showed a significant improvement in the signal noise ratio or image resolution of the magnetic resonance imaging (MRI) system. The HTS bolometer mounted on the silicon film is very sensitive and can detect small changes in radiant heat or temperature. Typical HTS microwave devices perform well in both spatial and cellular communications.
    The full realization of these HTS devices requires the development of reliable processing techniques. Because of the fact that HTS materials are oxides (eg, YBaCuO and TIBaCaCuO), they are very sensitive to environments such as moisture, chemicals, and moisture. Surface reactions usually degrade the surface layer of the material and degrade the performance of the device. As a result, the yield of the HTS apparatus by the conventional etching method is very low. For example, it is only 15-20%.
    Chemical etching is one way to form the desired design in the superconducting thin film. However, the strong thermodynamic driving force required for the etching process due to the formation of hydroxides and carbonates significantly degrades the HTS material. Existing etching methods developed have a typical duration of contact with the etchant, about 3-16 minutes, assuming a film thickness of 3000 kPa. This long etching time results in an increase in the surface resistance of the film and the loss of its superconductivity due to the increased chemical reaction. Therefore, a rapid etching process is required in order to reduce the possibility of deterioration of superconductivity on the surface of the film. This etching process should be to maintain the selected portions while removing unnecessary portions within a short period of time of the film.
    Ion implantation has been widely used to dope semiconductor devices. Recently, ion implantation has also been applied to inhibit superconductivity in HTS membranes and to pattern HTS planar devices (Ma et al., "A Planar Method for Patterning HTS Films and Multilayers" Appl. Phys. Lett., Vol 65 , p. 240, 1994). The unblocked portion is surrounded by the blocked region and remains in the superconducting state as the device region. Thus, applications for this type of device are limited to fully layered structures.
    Summary of the Invention
    The present invention provides a method of forming a thin film superconducting device designed using selective etching techniques. This technique allows for selective etching of superconducting thin films as single or multilayer devices. The method according to the invention forms a superconducting layer on top of the substrate material. Thereafter, a mask is applied to cover selected portions of the superconducting layer and implant ions into the layer. Next, chemical etching techniques such as acidic solutions are used to remove portions of the superconducting layer that are not masked and implanted with ion. The device thus created may be configured to be used as HTS nanostructures, such as, for example, carry confined devices, Josephson junctions, SQUIDs, RF coils, bolometers, microwave waveguides and filters. By this treatment, a microminiature superconducting device can be manufactured.
    Selective chemical etching can be modified by changing the chemical etching solvent and changing the type of ion implantation (both ion type and energy level). The ion implanted superconducting thin film will be removed much faster than the non-ion implanted region during the chemical etching process. If necessary, a thicker superconducting film or superconducting bulk wafer may be used instead of the substrate.
    The present invention relates to a method of manufacturing a superconducting device having a desired shape by selectively etching a portion of the superconducting material. The method according to the invention produces a very compact superconducting device using ion implantation in connection with chemical etching.
    Further objects, features and advantages of the invention will become apparent from the following detailed description taken in conjunction with the accompanying drawings which illustrate preferred embodiments of the invention.
    1 is a flowchart of steps for forming a superconducting device using a selective etching technique.
    2 shows a single layer superconducting device being manufactured in accordance with the present invention.
    3 illustrates a multilayer superconducting device being manufactured in accordance with the present invention.
    4A illustrates a superconducting device having a protective layer made in accordance with the present invention.
    4B shows another superconducting device with a protective layer.
    4C shows a multilayer superconducting device with a protective layer.
    FIG. 5 shows a table comparing etch rates between pure HTS structures and ion implanted HTS structures.
    6 shows a graph for the data of FIG. 5.
    7A shows a bolometer made in accordance with the present invention prior to chemical etching.
    7B shows a bolometer made in accordance with the present invention after chemical etching.
    7C shows a top view of a bolometer made in accordance with the present invention.
    The present invention allows the formation of superconducting devices using selective etching techniques. A superconducting thin film is formed on the substrate and patterned to the desired configuration. The substrate may be an IC chip or wafer, and SrTiO 3, LaAlO 3, made from a conventional oxide materials such as Al 2 O 3, or MgO. The use of an ion implantation device set at an appropriate energy level, along with the use of a mask to cover selected portions of the superconducting layer, allows the ion implantation portion of the superconducting layer to be removed at a much higher rate than the non-ion implanted portion during the chemical etching process. If the concentration level of the chemical etchant (typically acid) is low enough, the unimplanted region will not dissolve at all. However, all the implanted regions will dissolve. Thus, only selected areas of the superconducting thin film covered by the mask will remain. Ion implantation greatly speeds up the etching process and reduces degradation in the remaining superconducting portions.
    The accuracy and microscopic size of the ion beam from the ion implantation device allows precise patterns to be created in the superconducting thin film. The process of the present invention can produce superconducting devices even on the order of nanometers. Some examples of superconducting devices that can be produced are Josephson junctions, bolometers, RF coils, and waveguides. These small devices and other designs can be used in the design of microchips, sensors, and electronic devices. One example of use in such small devices is a tip for scanning electron microscopy that detects small objects on the order of atoms.
    1 are steps for a method of forming a superconducting device using a selective etching technique. Application of these steps is shown in the subsequent figures. The method of FIG. 1 allows very small superconducting structures, including nanoscale structures, to be created without destroying or distorting the superconducting properties of the structure to be created.
    Step 101 is placing a superconducting thin film on the substrate on which the structure is to be created. Examples of high temperature superconducting materials that can be used for TBCCO or YBCO. The thickness of the thin film depends on the application. In the above-mentioned embodiment, the thickness is 300 mW to 1 m. The substrate material also depends on the use of the structure. The result of this method is to selectively etch a portion of the HTS film in a short time without damaging the desired superconducting structure, leaving only the intended structure.
    Step 103 is to align the mask over selected portions of the HTS film to leave. One example of a mask is a photoresist mask formed by conventional photolithography to prevent ions from being implanted into the underlying superconducting material during subsequent ion implantation steps.
    Step 105 is implanting ions into the structure by an ion implanter device or other conventional method. One example of an ion implanter device that can be used is Eaton's 3206. Ions are implanted in a direction to encounter the mask before the HTS thin film. Other ion implantation energies may be used. Ions may be selected from single ions or ionic molecules (SiO 2 and SiO 2 and Si 3 F 4 ) such as Si, Al, B, Ni, Fe, Ca, Ti, Mn, Mg, Co, P and Sr. For the material to be described herein, the energy level should be in the range between 10 keV and 500 KeV and its impurity concentration should be in the range between 1 × 10 13 and 1 × 10 17 / cm 2. Ion implantation will alter the properties of the portion of the HTS film that is not covered by the mask.
    Next, step 107 is a step of chemically etching the entire structure. Chemical etching is preferably performed by applying an etchant such as phosphoric acid to the structure. The application of the etchant can be performed by dipping the structure into a container containing acid or by selectively applying acid to the desired area using any conventional method. The acid will remove a portion of the HTS membrane much faster than the non-ion implanted portion (as described in more detail below). Thus, after contact with the solvent for a period of time, removing the structure from the etchant leaves only a portion of the structure masked by ion implantation. This allows you to create HTS devices in the desired pattern for the selected application. Phosphoric acid may have a concentration of 1.5 × 10 −3 M to etch only the implanted region. After soaking in the vessel containing the acid, the etched superconducting device may be annealed in a furnace or rapid thermal annealer at 450 ° C. for a short time (30 seconds to 30 minutes) to strengthen the device.
    2 illustrates an example of the method of FIG. 1 relating to the formation of an HTS device. The structure (device) is shown in four stages of its manufacture.
    The structure 202 shows the substrate 201 on which the HTS thin film 203 is deposited. Mask 205 is aligned over the HTS thin film to ensure that the bottom of the mask is not implanted in the ion implantation step. The mask 205 in this example is an electron-beam lithographic mask with a width of 0.1 μm. This mask may be configured in any manner and multiple masks may be used on the same HTS film if necessary.
    Structure 212 shows the structure during the ion implantation step. The HTS film 213 is ion bombarded with the ion beam 217. Mask 215 blocks the ion beam from entering the HTS film directly below the mask. The ion beam 217 enters the substrate 211 depending on the thickness of the HTS film and does not have any substantial effect on the substrate.
    The substrate 222 shows the structure after the ion implantation operation is completed. The mask was removed, leaving only the substrate 211 and the HTS film 22. The films 225 and 227 of the HTS film 224 not covered by the mask were ion implanted. The portion 223 has a bell shape due to the transverse spread of the ion beam relative to the masked portion. For example, the bell shaped tail has a width of typically about 100 mm 3 for a 0.1 μm mask.
    Structure 232 illustrates the structure after selectively chemically etched. This structure was exposed to the chemical etchant and the portion of the HTS implanted was removed. If the structure is placed in the etchant for a few more seconds after the implanted portion is removed, the non-ion implanted portion will be etched at a slower rate if the etchant concentration is high enough. Thus, the bell shaped region 223 will be modified to have a roughly triangular shape 233 with a sharp tip with a distance of less than 100 microns or several atomic units. The only remaining part of this structure is the substrate 231 and the HTS device 233. This structure 232 can now be used for individual applications and may be used in combination with other structures depending on design specifications.
    FIG. 3 illustrates one example of the method of FIG. 1 used to form a multilayer structure that may be used as an HTS device by a more extensive form.
    Structure 301 includes a substrate 303 on which an HTS thin film 305 is deposited. Mask 307 is preferably coated on a portion of the HTS film that is held in a manner similar to that shown in FIG. To ion implant the unprotected portion, an ion beam 309 is provided in the structure 301.
    Structure 311 shows the ion implantation results. The substrate 313 now supports the non-implanted HTS film portion 318 and the implanted HTS film portions 316, 317. In addition, the mask was removed.
    Structure 321 shows a new HTS thin film 327 deposited on substrate 323 and HTS layer 325. This step is performed before the selective etching process. The new mask 329 is covered to this portion of the second layer 327 remaining in the final device. The second mask 329 should cover the entire portion of the first HTS film remaining in the device so that no portion of the first HTS film is implanted in the second ion implantation step. The ion beam 331 is then applied to the structure 321.
    Structure 341 illustrates the result of a second ion implantation before any chemical etching is performed. The first HTS thin film layer 345 is deposited on the structure 343, and the second HTS thin film layer 347 is deposited on the first thin film layer. The portion 355 in the first thin film layer and the portion 349 in the second thin film layer are not ion implanted because the masks are respectively placed. Portions 357 and 359 of the first HTS thin film layer and portions 351 and 353 of the second HTS thin film layer were ion implanted in the same manner as described above.
    Structure 361 illustrates the structure remaining after structure 341 is chemically etched. Portions of the ion implanted HTS thin films are etched at higher speeds so that they can be removed leaving only the portions that are not ion implanted. Ion non-implanted (pure) regions are not etched at all so that significant degradation does not occur in the final device or at a relatively slow rate depending on the acid concentration. If necessary to form the desired device configuration, this lamination method may be performed repeatedly.
    One such device configuration is a multiple RF coil device for receiving a plurality of resonant frequencies. RF coils are each formed on the superconducting layer using a mask. In FIG. 3, layer 365 has one or more RF coils and layer 367 has one or more RF coils. This allows the device 361 to allow for detection and reception of multiple frequencies within one device.
    4A, 4B and 4C illustrate superconducting devices that can be fabricated through the techniques of the present invention and the addition of a cap or protective layer. The protective layer is deposited on top of the superconducting layer when it is formed so that the superconducting layer is taken out of a "clean" environment, such as a clean room, and then does not react with other chemical conditions associated therewith.
    Many HTS materials are oxidizing materials that greatly enhance their reactivity. Examples of materials used as protective layers are SrTiO 3 , CeO 2 , Au, Ag, MgO or LaAlO 3 . The preferred thickness of these protective layers is 50 to 1000 mm 3 on thin films of 0.1 to 1 μm thick.
    4A is a structure 400 having a single layer HTS thin film 403 deposited on a substrate 401 coated with a protective layer 405. The protective layer 405 is thin enough to hardly reduce beam ions in the ion implantation process. Two masks 407 and 409 are disposed at the edges of the HTS thin film to protect the lower portions 411 and 413 from the ion beam. The central portion 415 not protected by the mask is ion implanted by the ion beam. During the etching process, small openings 408 are formed in the protective layer 405 so that the chemical etching solution can act in the center of the HTS thin film layer 403.
    After structure 400 is chemically etched, a superconducting device remains. The central portion 423 of the device is removed. The resulting structure can be used, for example, as a waveguide.
    4B shows a structure constructed in the same manner as described in FIG. 4A except that the bottom substrate layer is replaced by a thicker superconducting material, superconducting film or superconducting bulk wafer. Structure 455 includes an HTS base 447 and a protective layer 449 deposited thereon. Two masks 451 and 453 are disposed over the protective layer to prevent some of the HTS material under the mask from being ion implanted. The ion beams 455 are then irradiated directly to the structure 445 so that ions can be injected directly into the center of the HTS materials.
    When the ion beam is irradiated directly into the structure 445, the ion beam loses its effect after being injected into the HTS material by a predetermined distance. For example, the superconducting material will remain below the injected range from 0.1 to 1 μm deep from the membrane surface. Therefore, in this example, only those portions which are not applied by the mask in their upper portions will be introduced. Therefore, after chemically etching the structure, only the central portion of the HTS portion will be removed. The protective cap will be worn on top of the structure as in FIG. 4A. This new structure after chemical etching will appear as a structure 457 that can act as a waveguide, such as structure 421 in FIG. 4A, but will have different properties due to the additional superconducting material placed on the substrate.
    4C shows an example of a multi-layer HTS film with a protective layer that allows fabrication of additional patterns or designs of superconducting devices.
    Structure 461 illustrates the structure of FIG. 4A after ion implantation but before the chemical etching process is performed. The HTS thin film 465 is deposited on the substrate 463 and the protective layer 467 is deposited on the HTS thin film layer 465. Ion implantation is performed in the central portion 473, but ion implantation is not performed in the portions 469 and 471 because a mask is placed during the ion implantation process.
    Structure 473 represents an additional HTS thin film 475 that is deposited on top of protective layer 467. The second protective layer 476 is deposited on top of this additional HTS film 475. This HTS thin film can then be masked such that only selected portions of the second layer are left after the chemical etching process. The second ion implantation step will ion implant the regions of the second layer that are not applied by the mask. The mask configuration should be arranged such that the first HTS thin film layer is not affected by the second ion implantation. This can be accomplished by thickening the first passivation layer or by inserting a relatively thick buffer layer between the first passivation layer and the second HTS layer 475. This buffer layer may use the same material as the protective layer. Masks 476 and 477 are not shown in this example.
    Structure 480 shows structure 473 after being masked, ion implanted, and chemically etched. The chemical etch process removed portions of the ion implanted HTS thin film. The final structure can be used as a waveguide or RF coil of a microwave device. This final structure includes a substrate 482 with selected portions 484 of the HTS film remaining thereon. The protective layer 486 is on top of the first select portions 484 and the second select portions 488 of the second HTS thin film are on top of the protective layer. Finally, second protective layer 490 is on top of second select portion 488. The influence of the wiring can continue as needed.
    5 shows a table containing the etch rate of HTS materials at different concentrations of phosphoric acid. The process of the present invention has confirmed that the superconducting device can be quickly calculated. Column 501 shows the concentration of phosphoric acid used in the chemical etch phase of the structure. Category 503 represents the etch rate of YBCO, superconducting material under different conditions. These conditions include (1) no ion implantation (column 505; (2) Al 3+ implanted at 200 KeV; (3) Al 3+ implanted at 120 KeV; and (4) Fe 3 There are cases where + is implanted at 100 KeV The data show that the etch rate of the ion implanted superconducting films is greater than the etch rate of pure non-ion implanted HTS films, especially with lower acid concentrations. By selecting the appropriate ion implanted ion and the appropriate energy level for the ion, the etch rate can be selected as needed for any fabrication process.The etch rate of the ion implanted material can be determined by using the appropriate ion energy and the appropriate acid concentration. When it is about 2-5 times higher than pure membrane.
    Category 513 represents etch rates for different types of HTS material, TBCCO. Column 515 represents pure, non-implanted HTS material and column 517 represents ion implanted material. The etching rate for the ion implanted material is significantly higher. The etch rate for YBCO is about 4-10 times higher than the etch rate of TBCCO for etch solutions of 1 × 10 −1 M or more. The improved etch rate from the present invention makes it possible to prevent degradation of the HTS material surface and provides an improved method of patterning.
    Using phosphoric acid having a concentration of 5 × 10 −2 M or more, the etching rate of the ion implanted membrane is much faster than that of the pure membrane. Below the critical concentration of 1.5 × 10 −3 M, the acid does not have any etching effect on the pure membrane but the ion implanted membrane is still etched. This allows for a more accurate structure of the semiconductor compact device since the non-ion implanted regions remain complete. The etching rate of the film implanted with Al 3+ at the energy of 200 KeV is faster than that of the film implanted with Al 3+ at the energy of 120 KeV. In addition, the etching rate of the film implanted with Al 3+ is faster than the etching rate of the film implanted with Fe 3+ . Selective etching processes can be developed for HTS films with appropriate corrosion solutions in connection with ion implantation.
    It is known that high quality single phase YBCO and TBCCO materials create unstable binding and defects on the surface and inside of the superconducting material after ion implantation. Since the grating is an intact dilation, the binding energy decreases, but only small changes occur, so the grating parameters do not change too much. It is known that epitaxial YBCO films can be grown on top of an HTS film in which ion implantation, an insulator produced by Si ion implantation, is suppressed. The etching procedure first involves a chemical reaction between phosphoric acid and alkaline earth elements, which is represented by the following scheme:
    6H 3 PO 4 + 4 YBa 2 CU 3 O 2 =
    2YPO 4 + Ba 3 (PO 4 ) 2 + CU 3 (PO 4 ) 2 + Y 2 BaCUO 5 + 7CuO + BaCUO 2 + 3Ba (OH) 2 + 2H 2 O + O 2 . The second stage is the collapse of the crystal lattice. Larger chemical etch rates are expected because the larger the unstable bonds in the surface and the lattice and the more defects there are more opportunities for chemical reactions.
    FIG. 6 shows a graph of data points from FIG. 5. Line 607 shows etch rate versus acid concentration for pure YBCO (non-ion implanted). Line 601 represents the etch rate versus acid concentration for Al ions at 200 KeV. Line 603 shows the etch rate versus acid concentration for Al ions at 120 KeV. Line 605 shows the etch rate versus acid concentration for Fe ions at 100 KeV. This graph hypothesizes that superconducting materials can be formed in such a way that ion implanted HTS materials are etched at a much larger rate than nonion implanted materials.
    7A, 7B and 7C show a bolometer device made by the present invention. The bolometer can detect very small temperature changes by varying its resistance to measure and quantify. The bolometer can also detect other forms of radiation change as well. Volometers can be more effective when the active part of the device is thermally isolated, such as a free standing structure, for example, without a supporting support.
    FIG. 7A shows a bolometer 701 having a substrate layer 703, a first superconducting thin film layer 705, and a second superconducting layer 707. In addition, the protective layers may be inserted on top of the superconducting layers. Some of the superconducting layers were masked and implanted. Regions 709, 711, and 713 are ion implanted.
    7B shows the bolometer of FIG. 7A after being chemically etched. The bolometer 723 has an upper superconducting layer 723 disposed on the air gap alone without a supporting support. The air gap thermally insulates the active portion of the bolometer from the rest of the structure.
    7C is a top view of the bolometer 721. This top view shows the remaining superconducting portions 723, 725, 727 forming the bolometer sensing circuit. These superconducting ends 723, 725 are disposed on the first superconducting layer 705. The superconducting portion 727 is disposed on the first superconducting layer 707 and laminated from the first superconducting layer 705. This multilayer structure thermally insulates the sensing portion of the bolometer.
    The above description is for explaining the principles of the present invention. Thus, those skilled in the art will be able to produce various systems, apparatus, and methods that implement the principles of the invention, even if not explicitly shown or described herein. Accordingly, such modifications also fall within the spirit and scope of the invention as defined in the claims.
    权利要求:
    Claims (26)
    [1" claim-type="Currently amended] In the method of forming a superconducting device,
    Disposing a superconducting thin film layer on the substrate material;
    Covering selected portions of the superconducting layer with at least one mask;
    Implanting ions into the superconducting layer, wherein the at least one mask prevents ion implantation in the selected portions; And
    Chemically etching the superconducting layer to remove portions of the superconducting layer other than the selected portions
    Forming method of superconducting device comprising a.
    [2" claim-type="Currently amended] The method of claim 1, wherein the superconducting layer comprises an oxide material.
    [3" claim-type="Currently amended] The method of claim 1, wherein the ion implantation step comprises implanting aluminum ions.
    [4" claim-type="Currently amended] The method of claim 1, wherein the ion implantation step uses an ion implantation device having an ion beam intensity between 100 KeV and 200 KeV.
    [5" claim-type="Currently amended] The method of claim 1, further comprising forming a protective layer on the superconducting layer before the ion implantation step.
    [6" claim-type="Currently amended] The method of claim 5, wherein the protective layer forms an opening, and the chemical etching step supplies a solvent to the superconducting layer through the formed opening.
    [7" claim-type="Currently amended] The method of claim 1, wherein the superconducting device is a microstructure device.
    [8" claim-type="Currently amended] The method of claim 1, wherein the superconducting device is a nanostructure device.
    [9" claim-type="Currently amended] 10. The method of claim 1, further comprising depositing at least one additional superconducting thin film layer on the superconducting layer disposed on the substrate.
    [10" claim-type="Currently amended] 10. The method of claim 9, wherein each of the at least one additional layer is covered by a mask prior to the ion implantation step.
    [11" claim-type="Currently amended] 10. The method of claim 9, wherein the ion implantation of the at least one additional layer is performed prior to the chemical etching step.
    [12" claim-type="Currently amended] The method of claim 1, wherein the superconducting device is a waveguide.
    [13" claim-type="Currently amended] The method of claim 1, wherein the superconducting device comprises a radio frequency coil.
    [14" claim-type="Currently amended] The method of claim 1, wherein the superconducting device is a bolometer.
    [15" claim-type="Currently amended] In a superconducting device,
    Substrate material; And
    A thin film superconducting layer disposed on the substrate material,
    Ion implant the selected portions of the superconducting layer and subsequently chemically etch the device to remove the selected portions
    Superconducting apparatus, characterized in that.
    [16" claim-type="Currently amended] 16. The superconducting device of claim 15, wherein the superconducting device is a waveguide.
    [17" claim-type="Currently amended] 16. The superconducting device of claim 15, wherein said superconducting device is a radio frequency coil.
    [18" claim-type="Currently amended] 16. The superconducting device of claim 15, wherein the superconducting device is a bolometer.
    [19" claim-type="Currently amended] 16. The superconducting device of claim 15, wherein the superconducting layer comprises an oxide material.
    [20" claim-type="Currently amended] The superconducting device of claim 15, further comprising a protective layer formed on the superconducting layer.
    [21" claim-type="Currently amended] 21. The superconducting device of claim 20, wherein the protective layer does not inhibit the ion implantation.
    [22" claim-type="Currently amended] The superconducting device of claim 20, wherein the protective layer prevents the ion implantation.
    [23" claim-type="Currently amended] 16. The superconducting device of claim 15, further comprising at least one additional superconducting layer.
    [24" claim-type="Currently amended] 24. The superconducting device of claim 23, wherein each of the at least one additional layer comprises selected portions removed.
    [25" claim-type="Currently amended] 24. The superconducting device of claim 23, wherein a protective layer is formed on each of said additional superconducting layers.
    [26" claim-type="Currently amended] 16. The superconducting device of claim 15, wherein the superconducting layer comprises a high temperature superconducting material.
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    同族专利:
    公开号 | 公开日
    WO1998033665A1|1998-08-06|
    CN1102803C|2003-03-05|
    AU6033698A|1998-08-25|
    US5952269A|1999-09-14|
    EP0956209A1|1999-11-17|
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    CA2279505A1|1998-08-06|
    JP2002512732A|2002-04-23|
    CN1268924A|2000-10-04|
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    法律状态:
    1997-02-03|Priority to US3707897P
    1997-02-03|Priority to US60/037,078
    1998-01-21|Application filed by 더 트러스티스 오브 컬럼비아 유니버시티 인 더 시티 오브 뉴욕
    2000-11-25|Publication of KR20000070722A
    优先权:
    申请号 | 申请日 | 专利标题
    US3707897P| true| 1997-02-03|1997-02-03|
    US60/037,078|1997-02-03|
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